M.K. Hudait: search on Z-Library

The world's largest scientific articles store. 70,000,000+ articles for free.

Don't use scam websites

1

[IEEE 2008 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2008.12.15-2008.12.17)] 2008 IEEE International Electron Devices Meeting - High-performance 40nm gate length InSb p-channel compressively strained quantum well field effect transistors for low-power (VCC=0.5V) logic applications

Radosavljevic, M., Ashley, T., Andreev, A., Coomber, S. D., Dewey, G., Emeny, M. T., Fearn, M., Hayes, D. G., Hilton, K. P., Hudait, M. K., Jefferies, R., Martin, T., Pillarisetty, R., Rachmady, W., R

Year:

2008

Language:

english

File:

PDF, 895 KB

english, 2008

2

Single-junction InGaP/GaAs solar cells grown on Si substrates with SiGe buffer layers

S. A. Ringel, J. A. Carlin, C. L. Andre, M. K. Hudait, M. Gonzalez, D. M. Wilt, E. B. Clark, P. Jenkins, D. Scheiman, A. Allerman, E. A. Fitzgerald, C. W. Leitz

Journal:

Progress in Photovoltaics: Research and Applications

Year:

2002

Language:

english

File:

PDF, 117 KB

english, 2002

3

Structural, morphological, and band alignment properties of GaAs/Ge/GaAs heterostructures on (100), (110), and (111)A GaAs substrates

Hudait, Mantu K., Zhu, Yan, Jain, Nikhil, Hunter, Jerry L.

Journal:

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures

Year:

2013

Language:

english

File:

PDF, 7.01 MB

english, 2013

4

Ice-Nucleating and Antifreeze Proteins Recognize Ice Through a Diversity of Anchored Clathrate and Ice-Like Motifs

Hudait, Arpa, Odendahl, Nathan, Qiu, Yuqing, Paesani, Francesco, Molinero, Valeria

Journal:

Journal of the American Chemical Society

Year:

2018

Language:

english

File:

PDF, 1.83 MB

english, 2018

5

Dislocation reduction in GaN film using Ga-lean GaN buffer layer and migration enhanced epitaxy

Yuen-Yee Wong, Edward Yi Chang, Yue-Han Wu, Mantu K. Hudait, Tsung-Hsi Yang, Jet-Rung Chang, Jui-Tai Ku, Wu-Ching Chou, Chiang-Yao Chen, Jer-Shen Maa, Yueh-Chin Lin

Journal:

Thin Solid Films

Year:

2011

Language:

english

File:

PDF, 825 KB

english, 2011

6

Control of oxygen vacancies and Ce+3concentrations in doped ceria nanoparticles via the selection of lanthanide element

N. Shehata, K. Meehan, M. Hudait, N. Jain

Journal:

Journal of Nanoparticle Research

Year:

2012

Language:

english

File:

PDF, 663 KB

english, 2012

7

In situ grown Ge in an arsenic-free environment for GaAs/Ge/GaAs heterostructures on off-oriented (100) GaAs substrates using molecular beam epitaxy

Hudait, Mantu K., Zhu, Yan, Jain, Nikhil, Vijayaraghavan, Siddharth, Saha, Avijit, Merritt, Travis, Khodaparast, Giti A.

Journal:

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures

Year:

2012

Language:

english

File:

PDF, 3.61 MB

english, 2012

8

Reliability Studies on High-Temperature Operation of Mixed As/Sb Staggered Gap Tunnel FET Material and Devices

Yan Zhu,, Mohata, Dheeraj K., Datta, Suman, Hudait, Mantu K.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2014

Language:

english

File:

PDF, 1.34 MB

english, 2014

9

0.6-eV bandgap In/sub 0.69/Ga/sub 0.31/As thermophotovoltaic devices grown on InAs/sub y/P/sub 1-y/ step-graded buffers by molecular beam epitaxy

Hudait, M.K., Lin, Y., Palmisiano, M.N., Ringel, S.A.

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 535 KB

english, 2003

10

Integration of SrTiO 3 on Crystallographically Oriented Epitaxial Germanium for Low-Power Device Applications

Hudait, Mantu K., Clavel, Michael, Zhu, Yan, Goley, Patrick S., Kundu, Souvik, Maurya, Deepam, Priya, Shashank

Journal:

ACS Applied Materials & Interfaces

Year:

2015

Language:

english

File:

PDF, 6.15 MB

english, 2015

11

Germanium Based Field-Effect Transistors: Challenges and Opportunities

Goley, Patrick, Hudait, Mantu

Journal:

Year:

2014

Language:

english

File:

PDF, 1.41 MB

english, 2014

12

Low-power tunnel field effect transistors using mixed As and Sb based heterostructures

Zhu, Yan, Hudait, Mantu K.

Journal:

Nanotechnology Reviews

Year:

2013

Language:

english

File:

PDF, 9.60 MB

english, 2013

13

Heterogeneously-Grown Tunable Tensile Strained Germanium on Silicon for Photonic Devices

Clavel, Michael, Saladukha, Dzianis, Goley, Patrick S., Ochalski, Tomasz J., Murphy-Armando, Felipe, Bodnar, Robert J., Hudait, Mantu K.

Journal:

ACS Applied Materials & Interfaces

Year:

2015

Language:

english

File:

PDF, 5.73 MB

english, 2015

14

Strain-Engineered Biaxial Tensile Epitaxial Germanium for High-Performance Ge/InGaAs Tunnel Field-Effect Transistors

Clavel, Michael, Goley, Patrick, Jain, Nikhil, Yan Zhu,, Hudait, Mantu K.

Journal:

IEEE Journal of the Electron Devices Society

Year:

2015

Language:

english

File:

PDF, 2.55 MB

english, 2015

15

Heterogeneous Integration of Epitaxial Ge on Si using AlAs/GaAs Buffer Architecture: Suitability for Low-power Fin Field-Effect Transistors

Hudait, Mantu K., Clavel, Michael, Goley, Patrick, Jain, Nikhil, Zhu, Yan

Journal:

Scientific Reports

Year:

2014

Language:

english

File:

PDF, 1.77 MB

english, 2014

16

An Energy-Efficient Tensile-Strained Ge/InGaAs TFET 7T SRAM Cell Architecture for Ultralow-Voltage Applications

Liu, Jheng-Sin, Clavel, Michael B., Hudait, Mantu K.

Journal:

IEEE Transactions on Electron Devices

Year:

2017

Language:

english

File:

PDF, 1.88 MB

english, 2017

17

Growth, structural, and electrical properties of germanium- on -silicon heterostructure by molecular beam epitaxy

Ghosh, Aheli, Clavel, Michael B., Nguyen, Peter D., Meeker, Michael A., Khodaparast, Giti A., Bodnar, Robert J., Hudait, Mantu K.

Journal:

Year:

2017

Language:

english

File:

PDF, 13.89 MB

english, 2017

18

Structural and optical properties of sulfur passivated epitaxial step-graded GaAs 1-y Sb y materials

Hudait, Mantu K., Clavel, Michael B., Saluru, Sarat, Liu, Jheng-Sin, Meeker, Michael A., Khodaparast, Giti A., Bodnar, Robert J.

Journal:

Year:

2018

Language:

english

File:

PDF, 7.87 MB

english, 2018

19

Tri-gate GaN junction HEMT

Ma, Yunwei, Xiao, Ming, Du, Zhonghao, Yan, Xiaodong, Cheng, Kai, Clavel, Michael, Hudait, Mantu K., Kravchenko, Ivan, Wang, Han, Zhang, Yuhao

Journal:

Applied Physics Letters

Year:

2020

File:

PDF, 2.09 MB

2020

20

Metamorphic In0.7Al0.3As/In0.69Ga0.31As thermophotovoltaic devices grown on graded InAsyP1−y buffers by molecular beam epitaxy

Mantu K. Hudait, M. Brenner, S.A. Ringel

Journal:

Solid-State Electronics

Year:

2009

Language:

english

File:

PDF, 601 KB

english, 2009

21

Study of the inversion behaviors of Al2O3/InxGa1−xAs metal–oxide–semiconductor capacitors with different In contents

Yun-Chi Wu, Edward Yi Chang, Yueh-Chin Lin, Chi-Chung Kei, Mantu K. Hudait, Marko Radosavljevic, Yuen-Yee Wong, Chia-Ta Chang, Jui-Chien Huang, Shih-Hsuan Tang

Journal:

Solid-State Electronics

Year:

2010

Language:

english

File:

PDF, 648 KB

english, 2010

22

OMVPE growth of undoped and Si-doped GaAs epitaxial layers on Ge

Prasanta Modak, Mantu Kumar Hudait, Shyam Hardikar, S.B Krupanidhi

Journal:

Journal of Crystal Growth

Year:

1998

Language:

english

File:

PDF, 232 KB

english, 1998

23

Effect of VIII ratio on the optical properties of MOCVD grown undoped GaAs layers

Mantu Kumar Hudait, Prasanta Modak, Shyam Hardikar, S.B. Krupanidhi

Journal:

Solid State Communications

Year:

1997

Language:

english

File:

PDF, 460 KB

english, 1997

24

Correlation of compensation in Si-doped GaAs between electrical and optical methods

Mantu Kumar Hudait, S.B Krupanidhi

Journal:

Solid State Communications

Year:

1998

Language:

english

File:

PDF, 165 KB

english, 1998

25

Electrical transport characteristics of Au/n-GaAs Schottky diodes on n-Ge at low temperatures

M.K Hudait, P Venkateswarlu, S.B Krupanidhi

Journal:

Solid-State Electronics

Year:

2001

Language:

english

File:

PDF, 251 KB

english, 2001

26

Breakdown characteristics of MOVPE grown Si-doped GaAs Schottky diodes

M.K Hudait, S.B Krupanidhi

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 141 KB

english, 1999

27

Effects of thin oxide in metal–semiconductor and metal–insulator–semiconductor epi-GaAs Schottky diodes

Mantu Kumar Hudait, S.B. Krupanidhi

Journal:

Solid-State Electronics

Year:

2000

Language:

english

File:

PDF, 206 KB

english, 2000

28

Doping dependence of the barrier height and ideality factor of Au/n-GaAs Schottky diodes at low temperatures

M.K Hudait, S.B Krupanidhi

Journal:

Physica B: Condensed Matter

Year:

2001

Language:

english

File:

PDF, 270 KB

english, 2001

29

Interface states density distribution in Au/n-GaAs Schottky diodes on n-Ge and n-GaAs substrates

M.K. Hudait, S.B. Krupanidhi

Journal:

Materials Science and Engineering: B

Year:

2001

Language:

english

File:

PDF, 130 KB

english, 2001

30

Comparative studies of Si-doped n-type MOVPE GaAs on Ge and GaAs substrates

M.K. Hudait, P. Modak, S. Hardikar, K.S.R.K. Rao, S.B. Krupanidhi

Journal:

Materials Science and Engineering: B

Year:

1998

Language:

english

File:

PDF, 321 KB

english, 1998

31

Low temperature photoluminescence properties of Zn-doped GaAs

M.K. Hudait, P. Modak, K.S.R.K. Rao, S.B. Krupanidhi

Journal:

Materials Science and Engineering: B

Year:

1998

Language:

english

File:

PDF, 2.23 MB

english, 1998

32

Si incorporation and Burstein–Moss shift in n-type GaAs

M.K Hudait, P Modak, S.B Krupanidhi

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 214 KB

english, 1999

33

Anomalous current transport in Au/low-doped n-GaAs Schottky barrier diodes at low temperatures

S. Hardikar, M.K. Hudait, P. Modak, S.B. Krupanidhi, N. Padha

Journal:

Applied Physics A: Materials Science & Processing

Year:

1999

Language:

english

File:

PDF, 243 KB

english, 1999

34

Gate length scaling study of InAlAs/InGaAs/InAsP composite channel HEMTs

Dongmin Liu, Mantu Hudait, Yong Lin, Hyeongnam Kim, Steven A. Ringel, Wu Lu

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 139 KB

english, 2007

35

Investigation of scalability of In0.7Ga0.3As quantum well field effect transistor (QWFET) architecture for logic applications

E. Hwang, S. Mookerjea, M.K. Hudait, S. Datta

Journal:

Solid-State Electronics

Year:

2011

Language:

english

File:

PDF, 1014 KB

english, 2011

36

C–V characteristics of epitaxial germanium metal–oxide–semiconductor capacitor on GaAs substrate with ALD Al2O3 dielectric

Shih Hsuan Tang, Chien I. Kuo, Hai Dang Trinh, Mantu Hudait, Edward Yi Chang, Ching Yi Hsu, Yung Hsuan Su, Guang-Li Luo, Hong Quan Nguyen

Journal:

Microelectronic Engineering

Year:

2012

Language:

english

File:

PDF, 619 KB

english, 2012

37

Transmission electron microscopic study of GaAs/Ge heterostructures grown by low-pressure metal organic vapor phase epitaxy

Mantu Kumar Hudait, S.B Krupanidhi

Journal:

Materials Research Bulletin

Year:

2000

Language:

english

File:

PDF, 282 KB

english, 2000

38

Atomic force microscopic study of surface morphology in Si-doped epi-GaAs on Ge substrates: effect of off-orientation

Mantu Kumar Hudait, S.B. Krupanidhi

Journal:

Materials Research Bulletin

Year:

2000

Language:

english

File:

PDF, 333 KB

english, 2000

39

[IEEE 2008 IEEE Compound Semiconductor Integrated Circuits Symposium (CSICS) - Monterey, CA, USA (2008.10.12-2008.10.15)] 2008 IEEE Compound Semiconductor Integrated Circuits Symposium - Integrating III-V on Silicon for Future Nanoelectronics

Hudait, Mantu K., Chau, Robert

Year:

2008

Language:

english

File:

PDF, 148 KB

english, 2008

40

Carrier Transport in High-Mobility III–V Quantum-Well Transistors and Performance Impact for High-Speed Low-Power Logic Applications

Dewey, G., Hudait, M.K., Kangho Lee, Pillarisetty, R., Rachmady, W., Radosavljevic, M., Rakshit, T., Chau, R.

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 489 KB

english, 2008

41

Effect of Twinning on the Photoluminescence and Photoelectrochemical Properties of Indium Phosphide Nanowires Grown on Silicon (111)

Woo, Robyn L., Xiao, Rui, Kobayashi, Yoji, Gao, Li, Goel, Niti, Hudait, Mantu K., Mallouk, Thomas E., Hicks, R. F.

Journal:

Year:

2008

Language:

english

File:

PDF, 1.04 MB

english, 2008

42

Self-Catalyzed Epitaxial Growth of Vertical Indium Phosphide Nanowires on Silicon

Gao, Li, Woo, Robyn L., Liang, Baolai, Pozuelo, Marta, Prikhodko, Sergey, Jackson, Mike, Goel, Niti, Hudait, Mantu K., Huffaker, Diana L., Goorsky, Mark S., Kodambaka, Suneel, Hicks, Robert F.

Journal:

Year:

2009

Language:

english

File:

PDF, 3.05 MB

english, 2009

43

Ultrahigh-Speed 0.5 V Supply Voltage $\hbox{In}_{0.7} \hbox{Ga}_{0.3}\hbox{As}$ Quantum-Well Transistors on Silicon Substrate

Datta, S., Dewey, G., Fastenau, J.M., Hudait, M.K., Loubychev, D., Liu, W.K., Radosavljevic, M., Rachmady, W., Chau, R.

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 262 KB

english, 2007

44

[IEEE 2010 68th Annual Device Research Conference (DRC) - Notre Dame, IN, USA (2010.06.21-2010.06.23)] 68th Device Research Conference - Scalability study of In0.7Ga0.3As HEMTs for 22nm node and beyond logic applications

Hwang, E., Mookerjea, S., Hudait, M. K., Datta, S.

Year:

2010

Language:

english

File:

PDF, 1.51 MB

english, 2010

45

Impact of Threading Dislocations on the Design of GaAs and InGaP/GaAs Solar Cells on Si Using Finite Element Analysis

Jain, Nikhil, Hudait, Mantu K.

Journal:

IEEE Journal of Photovoltaics

Year:

2013

Language:

english

File:

PDF, 712 KB

english, 2013

46

Comparison of mixed anion, InAs[sub y]P[sub 1ây] and mixed cation, In[sub x]Al[sub 1âx]As metamorphic buffers grown by molecular beam epitaxy on (100) InP substrates

Journal:

Journal of Applied Physics

Year:

2004

Language:

english

File:

PDF, 1.12 MB

english, 2004

47

Quasi-zero lattice mismatch and band alignment of BaTiO3 on epitaxial (110)Ge

Hudait, M. K., Zhu, Y., Jain, N., Maurya, D., Zhou, Y., Priya, S

Journal:

Journal of Applied Physics

Year:

2013

Language:

english

File:

PDF, 1.54 MB

english, 2013

48

Ultra-high frequency photoconductivity decay in GaAs/Ge/GaAs double heterostructure grown by molecular beam epitaxy

Hudait, M. K., Zhu, Y., Johnston, S. W., Maurya, D., Priya, S., Umbel, R.

Journal:

Applied Physics Letters

Year:

2013

Language:

english

File:

PDF, 1.56 MB

english, 2013

49

Structural and band alignment properties of Al2O3 on epitaxial Ge grown on (100), (110), and (111)A GaAs substrates by molecular beam epitaxy

Hudait, M. K., Zhu, Y., Maurya, D., Priya, S., Patra, P. K., Ma, A. W. K., Aphale, A., Macwan, I.

Journal:

Journal of Applied Physics

Year:

2013

Language:

english

File:

PDF, 3.59 MB

english, 2013

50

Energy band alignment of atomic layer deposited HfO2 on epitaxial (110)Ge grown by molecular beam epitaxy

Hudait, M. K., Zhu, Y., Maurya, D., Priya, S.

Journal:

Applied Physics Letters

Year:

2013

Language:

english

File:

PDF, 1.06 MB

english, 2013

To build up a library is to create a life. It’s never just a random collection of books.

— Carlos María Domínguez

Official channel

Z-Library Desktop Launcher

Z-Library Since 2009 support@z-lib.do

EnglishРусскийEspañolItalianoελληνικάاللغة العربيةBahasa IndonesiaBahasa Malaysiaहिन्दीDeutschFrançaisPortuguêsУкраїнськаPolski中文繁體中文日本語Tiếng ViệtAzərbaycan DiliՀայոց լեզուภาษาไทยTürk Diliქართველიবাংলাپښتوతెలుగుاردو한국어SrpskiБългарски